CPC H01L 21/6833 (2013.01) [H01J 37/00 (2013.01); H01J 37/32082 (2013.01); H01J 37/32568 (2013.01); H01J 37/32642 (2013.01); H01J 37/32697 (2013.01); H01J 37/32816 (2013.01); H01L 21/3065 (2013.01); H01L 21/67069 (2013.01); H01L 21/67109 (2013.01); H01L 21/67126 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01); H01L 21/6831 (2013.01); H01L 21/68735 (2013.01); H01L 22/26 (2013.01); H01J 2237/334 (2013.01); H01L 21/68785 (2013.01)] | 8 Claims |
1. A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring to regulate the temperature; comprising:
providing a vacuum to the at least one ring backside temperature channel;
measuring pressure in the at least one ring backside temperature channel;
providing an electrostatic ring clamping voltage when the pressure in the at least one ring backside temperature channel reaches a threshold maximum pressure;
discontinuing the vacuum to the at least one ring backside temperature channel;
measuring pressure in the at least one ring backside temperature channel;
if pressure in the at least one ring backside temperature channel rises faster than a threshold rate, indicating sealing failure; and
if pressure in the at least one ring backside temperature channel does not rise faster than the threshold rate, providing a plasma process, using the at least one ring backside temperature channel to regulate a temperature of the edge ring.
|