CPC H01L 21/28575 (2013.01) [H01L 21/268 (2013.01); H01L 33/005 (2013.01); H01S 5/04252 (2019.08); H01S 5/04254 (2019.08); H01L 21/28587 (2013.01); H01L 2933/0016 (2013.01); H01S 5/04256 (2019.08)] | 18 Claims |
1. A semiconductor laser comprising:
a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and
a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence,
wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously,
the at least one first partial region is annealed, and
the at least one second partial region is unannealed.
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