US 11,935,752 B2
Device of dielectric layer
Yu-Yun Peng, Hsinchu (TW); Chung-Chi Ko, Nantou County (TW); and Keng-Chu Lin, Pingtung County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Mar. 12, 2021, as Appl. No. 17/200,133.
Application 17/200,133 is a division of application No. 16/015,743, filed on Jun. 22, 2018, granted, now 10,957,543.
Claims priority of provisional application 62/565,696, filed on Sep. 29, 2017.
Prior Publication US 2021/0202254 A1, Jul. 1, 2021
Int. Cl. H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01)
CPC H01L 21/28158 (2013.01) [H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02167 (2013.01); H01L 21/0217 (2013.01); H01L 21/022 (2013.01); H01L 21/02208 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 21/76224 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a gate structure over a substrate;
an interlayer dielectric (ILD) layer over the substrate and laterally surrounding the gate structure;
a gate spacer between the gate structure and the ILD layer; and
a dielectric cap over the gate structure and comprising:
a first dielectric layer comprising a first portion extending along a top surface of the gate structure and a second portion extending along an inner sidewall of the gate spacer, wherein the first dielectric layer is a first nitrogen-rich layer on and in contact with the gate structure;
a second dielectric layer comprising a first portion extending along the first portion of the first dielectric layer and a second portion extending along the second portion of the first dielectric layer, wherein the second dielectric layer is a first oxygen-rich layer on and in contact with the first nitrogen-rich layer;
a third dielectric layer over the first oxygen-rich layer, wherein the third dielectric layer is a second nitrogen-rich layer on and in contact with the first oxygen-rich layer;
a fourth dielectric layer over the second nitrogen-rich layer, wherein the fourth dielectric layer is a second oxygen-rich layer on and in contact with the second nitrogen-rich layer; and
a fifth dielectric layer over the fourth dielectric layer, wherein the fifth dielectric layer is thinner than the second dielectric layer.