US 11,935,751 B2
Boron nitride for mask patterning
Siyu Zhu, San Jose, CA (US); Chuanxi Yang, Los Altos, CA (US); Hang Yu, San Jose, CA (US); Deenesh Padhi, Sunnyvale, CA (US); Yeonju Kwak, Sunnyvale, CA (US); Jeong Hwan Kim, San Jose, CA (US); Qian Fu, Pleasanton, CA (US); and Xiawan Yang, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on May 25, 2021, as Appl. No. 17/330,013.
Prior Publication US 2022/0384189 A1, Dec. 1, 2022
Int. Cl. H01L 21/033 (2006.01); C23C 16/04 (2006.01); C23C 16/34 (2006.01); C23C 16/458 (2006.01); C23C 16/50 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/0337 (2013.01) [C23C 16/042 (2013.01); C23C 16/342 (2013.01); C23C 16/4584 (2013.01); C23C 16/50 (2013.01); H01J 37/32449 (2013.01); H01L 21/0332 (2013.01); H01L 21/31144 (2013.01); H01J 2237/332 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A deposition method comprising:
delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber;
providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor, wherein a flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor is greater than or about 2:1;
forming a plasma of all precursors within the processing region of the semiconductor processing chamber; and
depositing a boron-and-nitrogen material that is free of silicon on a substrate disposed within the processing region of the semiconductor processing chamber.