CPC H01L 21/0337 (2013.01) [C23C 16/042 (2013.01); C23C 16/342 (2013.01); C23C 16/4584 (2013.01); C23C 16/50 (2013.01); H01J 37/32449 (2013.01); H01L 21/0332 (2013.01); H01L 21/31144 (2013.01); H01J 2237/332 (2013.01)] | 20 Claims |
1. A deposition method comprising:
delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber;
providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor, wherein a flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor is greater than or about 2:1;
forming a plasma of all precursors within the processing region of the semiconductor processing chamber; and
depositing a boron-and-nitrogen material that is free of silicon on a substrate disposed within the processing region of the semiconductor processing chamber.
|