US 11,935,743 B2
Method for manufacturing a monocrystalline layer of diamond or iridium material and substrate for epitaxially growing a monocrystalline layer of diamond or iridium material
Bruno Ghyselen, Seyssinet (FR)
Assigned to SOITEC, Bernin (FR)
Appl. No. 17/042,728
Filed by Soitec, Bernin (FR)
PCT Filed Mar. 26, 2019, PCT No. PCT/IB2019/000196
§ 371(c)(1), (2) Date Sep. 28, 2020,
PCT Pub. No. WO2019/186262, PCT Pub. Date Oct. 3, 2019.
Claims priority of application No. 1800255 (FR), filed on Mar. 28, 2018.
Prior Publication US 2021/0020434 A1, Jan. 21, 2021
Int. Cl. H01L 21/02 (2006.01); C30B 23/02 (2006.01); C30B 25/18 (2006.01); C30B 29/04 (2006.01); C30B 29/06 (2006.01)
CPC H01L 21/02293 (2013.01) [C30B 23/025 (2013.01); C30B 25/183 (2013.01); C30B 29/04 (2013.01); C30B 29/06 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A process for producing a monocrystalline layer of diamond material, comprising transferring a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material followed by epitaxial growth of the monocrystalline layer of diamond material.