US 11,935,573 B2
Magnetic memory devices having multiple magnetic layers therein
Sung Chul Lee, Osan-si (KR); and Ung Hwan Pi, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 3, 2022, as Appl. No. 17/735,931.
Application 17/735,931 is a continuation of application No. 16/828,429, filed on Mar. 24, 2020, granted, now 11,348,626.
Claims priority of application No. 10-2019-0100451 (KR), filed on Aug. 16, 2019.
Prior Publication US 2022/0262419 A1, Aug. 18, 2022
Int. Cl. G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01)
CPC G11C 11/161 (2013.01) [H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetic memory device, comprising:
a first magnetic layer extending in a first direction, the first magnetic layer including a first region having magnetic moments oriented in a first rotational direction along the first direction;
a second magnetic layer on the first magnetic layer and extending in the first direction, the second magnetic layer including a second region having magnetic moments oriented in a second rotational direction along the first direction, the second rotational direction is opposite to the first rotational direction;
a conductive layer, which extends in the first direction between the first magnetic layer and the second magnetic layer and is configured to support current flow in the first direction between the first and second magnetic layers, from a first end of the conductive layer to a second end of the conductive layer;
an upper magnetic layer on the second magnetic layer, the upper magnetic layer having a magnetization direction fixed in one direction; and
a tunnel barrier pattern between the upper magnetic layer and the second magnetic layer.