US 11,934,689 B2
Word line group read counters
Michael G. Miller, Boise, ID (US); Ashutosh Malshe, Fremont, CA (US); Gianni Stephen Alsasua, Rancho Cordova, CA (US); Renato Padilla, Jr., Folsom, CA (US); Vamsi Pavan Rayaprolu, San Jose, CA (US); Kishore Kumar Muchherla, Fremont, CA (US); and Harish Reddy Singidi, Fremont, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 10, 2022, as Appl. No. 17/984,929.
Application 17/984,929 is a continuation of application No. 17/080,567, filed on Oct. 26, 2020, granted, now 11,507,300.
Prior Publication US 2023/0076362 A1, Mar. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01); G06F 11/07 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01)
CPC G06F 3/0655 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01); G06F 11/0727 (2013.01); G06F 11/076 (2013.01); G06F 11/0793 (2013.01); G11C 16/26 (2013.01); G11C 16/3427 (2013.01); G11C 16/0483 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory device organized into multiple word line groups, each word line group of the multiple word line groups comprising one or more word lines; and
a processing device, operatively coupled with the memory device, to perform operations comprising:
detecting a read operation directed at the memory device;
identifying a word line corresponding to a read location of the read operation based on a stored mapping between read locations and word lines in the memory device;
identifying a word line group from among the multiple word line groups to which the word line belongs based on a stored mapping between word lines and the multiple word line groups;
incrementing a read counter associated with the word line group based on the read location of the read operation corresponding to the word line from the word line group;
determining the read counter exceeds a read-disturb threshold; and
in response to determining the read counter exceeds the read-disturb threshold, performing read-disturb handling on the word line group.