US 11,932,937 B2
Coated product and production method
Karl Brennfleck, Karlsruhe (DE); Johannes Galle, Hundsangen (DE); Dennis Muscutt, Lollar (DE); and Volker Rauhut, Buseck (DE)
Assigned to SCHUNK KOHLENSTOFFTECHNIK GMBH, Heuchelheim (DE)
Appl. No. 16/489,632
Filed by SCHUNK KOHLENSTOFFTECHNIK GMBH, Heuchelheim (DE)
PCT Filed Mar. 1, 2018, PCT No. PCT/EP2018/055020
§ 371(c)(1), (2) Date Aug. 28, 2019,
PCT Pub. No. WO2018/166802, PCT Pub. Date Sep. 20, 2018.
Claims priority of application No. 10 2017 204 257.5 (DE), filed on Mar. 14, 2017.
Prior Publication US 2020/0024732 A1, Jan. 23, 2020
Int. Cl. C23C 16/34 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/46 (2006.01)
CPC C23C 16/345 (2013.01) [C23C 16/0272 (2013.01); C23C 16/045 (2013.01); C23C 16/46 (2013.01)] 1 Claim
 
1. A method for producing a product, in particular a body, the product being formed from a material consisting essentially of carbon or of a ceramic material, the product being coated with a surface layer by chemical vapor deposition (CVD), comprising coating the product with a surface layer of at least semi-crystalline-silicon nitride (Si3N4), the surface layer being formed on the product at a process temperature of more than 1100° C. to 1700° C., wherein, prior to formation of the surface layer, the product is infiltrated with the at least semi-crystalline silicon nitride (Si3N4) by chemical vapor infiltration (CVI) at the process temperature of more than 800° C. to 1700° C., wherein the surface layer is formed from stoichiometric crystalline silicon nitride, and the crystalline silicon nitride is formed free of carbon, hydrogen, oxygen, and metals;
characterized in that during chemical vapor deposition, the product is heated to process temperature in a process chamber and a metered amount of a gas mixture comprising at least one compound containing silicon and one compound containing nitrogen is fed into the process chamber, the surface layer of crystalline silicon nitride being deposited on the product; and
characterized in that the gas mixture is formed within a process-gas nozzle in the process chamber, and wherein gases forming the gas mixture are not mixed before they reach the nozzle.