US 11,932,534 B2
MEMS device having a metallization structure embedded in a dielectric structure with laterally offset sidewalls of a first portion and a second portion
Hung-Hua Lin, Taipei (TW); Chang-Ming Wu, New Taipei (TW); Chung-Yi Yu, Hsin-Chu (TW); Ping-Yin Liu, Yonghe (TW); and Jung-Huei Peng, Jhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Mar. 16, 2022, as Appl. No. 17/696,299.
Application 16/384,066 is a division of application No. 15/855,449, filed on Dec. 27, 2017, granted, now 10,294,098, issued on May 21, 2019.
Application 17/696,299 is a continuation of application No. 16/384,066, filed on Apr. 15, 2019, granted, now 11,279,615.
Claims priority of provisional application 62/563,977, filed on Sep. 27, 2017.
Prior Publication US 2022/0204340 A1, Jun. 30, 2022
Int. Cl. B81C 1/00 (2006.01); B81B 7/00 (2006.01); H01L 23/00 (2006.01)
CPC B81C 1/00238 (2013.01) [B81B 7/008 (2013.01); B81C 1/00333 (2013.01); H01L 24/09 (2013.01); H01L 24/89 (2013.01); B81B 2207/07 (2013.01); B81C 2201/0132 (2013.01); B81C 2203/0109 (2013.01); B81C 2203/0785 (2013.01); B81C 2203/0792 (2013.01); H01L 2224/091 (2013.01); H01L 2224/80013 (2013.01); H01L 2224/80895 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A microelectromechanical system (MEMS) device, comprising:
a metallization structure disposed over a first semiconductor substrate, wherein the metallization structure comprises a plurality of conductive features embedded in a dielectric structure, wherein the dielectric structure has a first portion disposed over a second portion, and wherein a first sidewall of the first portion of the dielectric structure is laterally spaced from a first sidewall of the second portion of the dielectric structure;
a cavity disposed in the metallization structure, wherein the cavity is disposed laterally between the first sidewall of the first portion of the dielectric structure and a second sidewall of the first portion of the dielectric structure opposite the first sidewall of the first portion of the dielectric structure; and
a second semiconductor substrate disposed over the metallization structure, wherein the second semiconductor substrate comprises a movable element disposed within the cavity.