US 12,256,651 B2
With low density change, phase-change memory and preparation method therefor
Xiaomin Cheng, Hubei (CN); Jinlong Feng, Hubei (CN); Ming Xu, Hubei (CN); Meng Xu, Hubei (CN); and Xiangshui Miao, Hubei (CN)
Assigned to HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Hubei (CN)
Appl. No. 17/762,742
Filed by HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Hubei (CN)
PCT Filed Oct. 21, 2020, PCT No. PCT/CN2020/122554
§ 371(c)(1), (2) Date Mar. 23, 2022,
PCT Pub. No. WO2021/083010, PCT Pub. Date May 6, 2021.
Claims priority of application No. 201911033437.4 (CN), filed on Oct. 28, 2019.
Prior Publication US 2022/0344584 A1, Oct. 27, 2022
Int. Cl. H10N 70/20 (2023.01); H10B 63/10 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [H10B 63/10 (2023.02); H10N 70/023 (2023.02); H10N 70/841 (2023.02); H10N 70/8613 (2023.02); H10N 70/8828 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A superlattice phase-change thin film, comprising a plurality of units, and the plurality of units at least comprises one unit and another unit stacked on the one unit,
wherein the one unit and the another unit respectively comprises:
a first phase-change layer having a positive density change during crystallization; and
a second phase-change layer having a negative density change during crystallization, wherein the second phase-change layer is disposed on the first phase-change layer, and the second phase-change layer adopts a chromium germanium tellurium ternary alloy material,
wherein two sides of the second phase-change layer of the one unit respectively contacts with the first phase-change layer of the one unit and the first phase-change layer of the another unit,
wherein a first ratio of a thickness of the second phase-change layer to a thickness of the first phase-change layer is A, a second ratio of a density change ratio of the second phase-change layer to a density change ratio of the first phase-change layer during phase changing is B, and the first ratio A is an absolute value of a reciprocal of the second ratio B.