US 12,256,650 B1
Memory cells based on superconducting and magnetic materials and methods of their control in arrays
Ivan Nevirkovets, Evanston, IL (US); and Oleg Mukhanov, Putnam Valley, NY (US)
Assigned to SeeQC, Inc., Elmsford, NY (US)
Filed by SeeQC Inc., Elmsford, NY (US)
Filed on Jul. 31, 2022, as Appl. No. 17/878,034.
Application 17/878,034 is a continuation in part of application No. 17/307,931, filed on May 4, 2021, granted, now 11,800,814.
Claims priority of provisional application 63/021,056, filed on May 6, 2020.
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/00 (2006.01); G11C 11/44 (2006.01); H10N 60/12 (2023.01); H10N 60/80 (2023.01); H10N 60/84 (2023.01); H10N 69/00 (2023.01)
CPC H10N 60/84 (2023.02) [G11C 11/44 (2013.01); H10N 60/12 (2023.02); H10N 60/805 (2023.02); H10N 69/00 (2023.02)] 30 Claims
OG exemplary drawing
 
1. A memory cell, comprising:
a magnetic junction comprising:
at least two magnetic layers, each respective magnetic layer having a different coercive force and a distinct magnetization vector, and
a non-magnetic layer situated between respective magnetic layers; and
a Josephson junction having a critical current, comprising two superconducting layers and a non-superconducting layer situated between the two superconducting layers, at least one of the two superconducting layers being proximate to the magnetic junction,
wherein the magnetic junction and the Josephson junction are magnetically coupled and the critical current of the Josephson junction varies in response to a joint magnetization vector of the at least two magnetic layers of the magnetic junction.