| CPC H10K 59/1315 (2023.02) [H10K 59/1201 (2023.02)] | 4 Claims |
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1. A method of manufacturing a display device, the method comprising:
forming a buffer layer on a base substrate;
forming an active layer on the buffer layer;
forming a first gate insulation layer on the active layer;
forming a first gate line on the first gate insulation layer, the first gate line including molybdenum;
forming a second gate insulation layer on the first gate line;
forming a second gate line on the second gate insulation layer, the second gate line including aluminum or an aluminum alloy;
forming an insulation interlayer on the second gate line;
simultaneously defining an active contact hole which exposes the active layer in the insulation interlayer, the second gate insulation layer, and the first gate insulation layer, a first gate contact hole which exposes the first gate line in the insulation interlayer and the second gate insulation layer, and a first opening which overlaps a bendable area in the insulation interlayer, the second gate insulation layer, the first gate insulation layer, and a first portion of the buffer layer; and
simultaneously defining a second gate contact hole which exposes the second gate line in the insulation interlayer and a second opening which overlaps the bendable area in a second portion of the buffer layer and a portion of the base substrate.
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