US 12,256,594 B2
Light emitting diode and display device
Gang Yu, Beijing (CN); and Zhuo Chen, Beijing (CN)
Assigned to BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Filed on May 4, 2023, as Appl. No. 18/312,313.
Application 18/312,313 is a continuation of application No. 17/411,691, filed on Aug. 25, 2021, granted, now 11,716,871.
Application 17/411,691 is a continuation of application No. 16/630,595, granted, now 11,133,487, issued on Sep. 28, 2021, previously published as PCT/CN2019/094260, filed on Jul. 1, 2019.
Claims priority of application No. 201810706678.X (CN), filed on Jul. 2, 2018.
Prior Publication US 2023/0276653 A1, Aug. 31, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10K 50/828 (2023.01); H10K 50/16 (2023.01); H10K 71/60 (2023.01); H10K 101/30 (2023.01)
CPC H10K 50/828 (2023.02) [H10K 50/16 (2023.02); H10K 71/60 (2023.02); H10K 2101/30 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A light emitting diode, comprising a first electrode, a quantum dot light emitting layer, a carrier transport layer and a second electrode,
wherein the light emitting diode further comprises a metal transition layer located between the carrier transport layer and the second electrode, and the second electrode comprises a transparent conductive oxide material, and
wherein the metal transition layer is in contact with the second electrode, and a surface of the metal transition layer in contact with the second electrode has a roughness Rms greater than 1.0 nm, and wherein the roughness Rms is a roughness measured in an AFM photograph and expressed in a calculated root mean square.