US 12,256,590 B2
Light sensor pixel and method of manufacturing the same
Thierry Berger, Brignoud (FR); and Stephane Allegret-Maret, Grenoble (FR)
Assigned to STMicroelectronics (Crolles 2) SAS, Crolles (FR)
Filed by STMicroelectronics (Crolles 2) SAS, Crolles (FR)
Filed on Dec. 6, 2021, as Appl. No. 17/543,004.
Claims priority of application No. 2012858 (FR), filed on Dec. 8, 2020.
Prior Publication US 2022/0181390 A1, Jun. 9, 2022
Int. Cl. H01L 23/14 (2006.01); H10K 30/35 (2023.01); H10K 30/82 (2023.01); H10K 30/87 (2023.01); H10K 39/32 (2023.01)
CPC H10K 39/32 (2023.02) [H10K 30/35 (2023.02); H10K 30/82 (2023.02); H10K 30/87 (2023.02)] 24 Claims
OG exemplary drawing
 
1. A method of manufacturing a pixel, comprising the successive steps of:
depositing a first electrode layer on an exposed surface of an interconnection structure of an integrated circuit and in contact with a conductive element of the interconnection structure which is flush with said exposed surface;
depositing an insulating layer over the first electrode layer;
forming an opening crossing through the insulating layer to an upper surface of the first electrode layer;
depositing a second electrode layer on top of and in contact with the upper surface of the first electrode layer and lateral walls of the opening crossing through the insulating layer;
removing a portion of the second electrode layer resting on an upper surface of the insulating layer; and
depositing a film on top of the insulating layer, the second electrode layer and filling the opening, wherein a portion of said film in the opening is located where radiation at an operating wavelength of the pixel is focused and received, and wherein said portion is configured to convert photons into electron-hole pairs.
 
14. A method of manufacturing a pixel, comprising the successive steps of:
depositing a first conductive layer on an upper surface of an interconnection structure;
depositing an insulating layer over the first conductive layer;
forming an opening crossing through the insulating layer to an upper surface of the first conductive layer;
depositing a second conductive layer within the opening in contact with the upper surface of the first conductive layer and lateral walls of the opening;
depositing a film filling the opening and in contact with the second conductive layer;
depositing a third conductive layer on the film;
wherein a portion of said film in the opening is located where radiation at an operating wavelength of the pixel is focused and received, and wherein said portion is configured to convert photons into electron-hole pairs.