US 12,256,580 B2
Semiconductor device
Toshiya Fukudome, Toyama (JP); Koji Nakatsu, Toyama (JP); and Shigeo Hayashi, Kyoto (JP)
Assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto (JP)
Filed by Nuvoton Technology Corporation Japan, Kyoto (JP)
Filed on May 27, 2022, as Appl. No. 17/826,929.
Application 17/826,929 is a continuation in part of application No. PCT/JP2020/041787, filed on Nov. 9, 2020.
Claims priority of application No. 2019-223986 (JP), filed on Dec. 11, 2019.
Prior Publication US 2022/0293831 A1, Sep. 15, 2022
Int. Cl. H10H 20/854 (2025.01); H10H 20/856 (2025.01)
CPC H10H 20/854 (2025.01) [H10H 20/856 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a mounting substrate;
a thin cured silicone resin material film above and in contact with the mounting substrate;
a first cured silicone resin material in contact with the thin cured silicone resin material film; and
a semiconductor element mounted above the mounting substrate, wherein
in a whole region in a thickness direction, an oxygen content per unit volume of the thin cured silicone resin material film is higher than an oxygen content per unit volume of the first cured silicone resin material, and
in a plan view of the mounting substrate, the thin cured silicone resin material film is disposed only outside the semiconductor element.