| CPC H10F 77/334 (2025.01) [H10F 30/2255 (2025.01); H10F 39/8033 (2025.01); H10F 77/14 (2025.01)] | 19 Claims |
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1. An optical sensing apparatus comprising:
a substrate comprising a first material;
an absorption region comprising a second material different from the first material, the absorption region configured to receive an optical signal and generate photo-carriers in response to receiving the optical signal;
an amplification region formed in the substrate configured to collect at least a portion of the photo-carriers from the absorption region and to amplify the portion of the photo-carriers;
a buried-dopant region formed in the substrate configured to collect at least a portion of the amplified portion of the photo-carriers from the amplification region, wherein the amplification region is between the absorption region and the buried-dopant region; and
an interface-dopant region formed between the absorption region and the buried-dopant region in the substrate,
wherein the buried-dopant region comprises one or more first buried-dopant regions and one or more second buried-dopant regions at least partially surrounding the one or more first buried-dopant regions,
wherein the one or more first buried-dopant regions and the one or more second buried-dopant regions are doped with a dopant having a first conductivity type,
wherein a property associated with the one or more first buried-dopant regions is different from the property associated with the second buried-dopant regions so as to form, under a reverse bias breakdown voltage, one or more punch-through regions and one or more blocking regions in the amplification region, wherein the one or more punch-through regions are adjacent to the one or more first buried-dopant regions and the one or more blocking regions are adjacent to the one or more second buried-dopant regions, and
wherein the property comprises a peak doping concentration or a depth.
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