US 12,256,575 B2
Image sensor
Shin-Hong Kuo, Hsin-Chu (TW); Yu-Chi Chang, Hsin-Chu (TW); Zong-Ru Tu, Hsin-Chu (TW); Ching-Chiang Wu, Hsin-Chu (TW); and Po-Hsiang Wang, Hsin-Chu (TW)
Assigned to VisEra Technologies Company Ltd., Hsin-Chu (TW)
Filed by VisEra Technologies Company Ltd., Hsin-Chu (TW)
Filed on Jun. 7, 2022, as Appl. No. 17/834,706.
Claims priority of provisional application 63/279,882, filed on Nov. 16, 2021.
Prior Publication US 2023/0154956 A1, May 18, 2023
Int. Cl. H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/806 (2025.01) [H10F 39/182 (2025.01); H10F 39/805 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising a first pixel array, wherein the first pixel array comprises:
a plurality of photo diodes; and
a polyhedron structure located above the plurality of photo diodes, wherein the polyhedron structure is configured to divide an incident light into a plurality of light beams, and each of the plurality of light beams is respectively focused in each of the plurality of photo diodes;
wherein the polyhedron structure comprises a bottom facet, a top facet, and at least one side facet, the bottom facet is located between the side facet and the photo diodes, an orthogonal projection of the polyhedron structure overlaps with the plurality of photo diodes, an area of the bottom facet is greater than an area of the top facet, a number of the side facets is greater than or equal to three, and a sum of a number of the side facets and a number of the top facet of the polyhedron structure is greater than or equal to the number of the plurality of photo diodes.