US 12,256,574 B2
Single-photon avalanche diode devices with shaped junction regions
Ching-Ying Lu, Shenzhen (CN); Yangsen Kang, San Jose, CA (US); and Shuang Li, Shenzhen (CN)
Assigned to SHENZHEN ADAPS PHOTONICS TECHNOLOGY CO., LTD., Shenzhen (CN)
Filed by SHENZHEN ADAPS PHOTONICS TECHNOLOGY CO., LTD., Shenzhen (CN)
Filed on Jan. 25, 2022, as Appl. No. 17/584,346.
Prior Publication US 2022/0149087 A1, May 12, 2022
Int. Cl. H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/8033 (2025.01) [H10F 39/014 (2025.01); H10F 39/184 (2025.01); H10F 39/199 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A single-photon avalanche diode (SPAD) image sensor, comprising:
a first sidewall and a second sidewall;
a silicon material configured between the first sidewall and the second sidewall, the silicon material comprising a top region and a bottom region;
an aperture region positioned at the top region;
a lens overlaying the aperture region;
a plurality of fillings configured at the bottom region, the plurality of fillings being arranged according to a first pattern;
a first doped region configured within the silicon material, the first doped region comprising a first boundary, the first boundary being characterized by a first wave shape corresponding to the first pattern;
a second doped region configured within the silicon material, the second doped region comprising a second boundary, the second boundary being characterized by a second wave shape corresponding to the first pattern; and
a junction region configured between the first doped region and the second doped region, the junction region being characterized by a third wave shape corresponding to the first pattern.