US 12,256,572 B1
Transistors, method for making the same, electrostatic discharge protection circuit, and electronic device
Lijie Zhao, Foshan (CN); and Suming Lai, San Diego, CA (US)
Assigned to Halo Microelectronics Co., Ltd, Foshan (CN)
Filed by Halo Microelectronics Co., Ltd, Foshan (CN)
Filed on Sep. 26, 2024, as Appl. No. 18/898,465.
Claims priority of application No. 202410764266.7 (CN), filed on Jun. 14, 2024.
Int. Cl. H10D 89/00 (2025.01); H10D 10/00 (2025.01); H10D 89/60 (2025.01)
CPC H10D 89/711 (2025.01) [H10D 10/00 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A transistor comprising:
a P-type well, a body terminal region, and a source region, wherein the body terminal region and the source region are arranged in the P-type well, and the body terminal region is adjacent to the source region;
a first metal silicide layer arranged on surfaces of the body terminal region and the source region, and electrically connected to the body terminal region and the source region separately; and
a first metal and a plurality of first contact structures, wherein:
the first metal is electrically connected, through the plurality of first contact structures, only to a first portion of the first metal silicide layer that is located on a surface of the body terminal region to generate a resistance between an emitter of a parasitic bipolar transistor of the transistor and the body terminal region, or
the first metal is electrically connected, through the plurality of first contact structures, only to a second portion of the first metal silicide layer located on a surface of the source region to generate a resistance between a base of the parasitic bipolar transistor of the transistor and the source region; and
wherein a PN junction between the base and the emitter of the parasitic bipolar transistor is located between the P-type well and the source region; and
wherein the body terminal region and the source region extend continuously alongside each other.