| CPC H10D 84/0142 (2025.01) [H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01); H10D 64/258 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01)] | 20 Claims |
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20. A semiconductor device comprising:
a first active pattern which extends in a first horizontal direction;
a second active pattern which extends in the first horizontal direction, and is spaced apart from the first active pattern by a first distance in a second horizontal direction different from the first horizontal direction;
a third active pattern which extends in the first horizontal direction, and is spaced apart from the second active pattern by a second distance greater than the first distance in the second horizontal direction;
a first plurality of nanosheets stacked on the first active pattern which are spaced apart from each other in a vertical direction that is perpendicular to the first horizontal direction;
a second plurality of nanosheets stacked on the third active pattern which are spaced apart from each other in the vertical direction;
a first gate electrode which extends in the second horizontal direction on the first to third active patterns, wherein the first and second plurality of nanosheets are in the first gate electrode;
a second gate electrode which extends in the second horizontal direction on the first and second active patterns, and is spaced apart from the first gate electrode in the first horizontal direction, wherein the first plurality of nanosheets are in second gate electrode;
a first source/drain region on the first active pattern between the first gate electrode and the second gate electrode;
a second source/drain region on the third active pattern on a first side of the first gate electrode;
a source/drain contact which is on the first and second source/drain regions, in direct contact with each of the first and second source/drain regions, and the source/drain contact comprises a first portion and a second portion protruding from the first portion in the vertical direction;
a first gate contact which extends in the second horizontal direction on the first gate electrode, is in direct contact with the first gate electrode, and has a width in the first horizontal direction less than a width in the second horizontal direction; and
a second gate contact which extends in the second horizontal direction on the second gate electrode, is in direct contact with the second gate electrode, has a width in the first horizontal direction less than a width in the second horizontal direction, and overlaps each of the first and second active patterns in the vertical direction.
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