US 12,256,557 B2
Ovonic threshold switch selectors with electrodes including carbon and metal
Oleksandr Mosendz, Campbell, CA (US); James Reiner, Palo Alto, CA (US); Bruce Terris, Sunnyvale, CA (US); and John Read, San Jose, CA (US)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US)
Filed on Jan. 19, 2022, as Appl. No. 17/579,147.
Prior Publication US 2023/0232639 A1, Jul. 20, 2023
Int. Cl. H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10B 63/24 (2023.02) [H10N 70/231 (2023.02); H10N 70/823 (2023.02); H10N 70/8828 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a memory material portion; and
an ovonic threshold switch selector element, wherein the ovonic threshold switch selector element comprises:
a first carbon-containing electrode comprising carbon and a metal;
a second carbon-containing electrode comprising the carbon and the metal; and
an ovonic threshold switch material portion located between the first electrode and the second electrode;
wherein:
the first carbon-containing electrode comprises a first carbon-based electrode and a first metallic layer;
the second carbon-containing electrode comprises a second metallic layer and a second carbon-based electrode;
the ovonic threshold switch selector element comprises:
the first carbon-based electrode;
the first metallic layer located on the first carbon-based electrode;
the ovonic threshold switch material portion located on the first metallic layer;
the second metallic layer located on the ovonic threshold switch material portion; and
the second carbon-based electrode located on the second metallic layer; and
each of the first carbon-based electrode and the second carbon-based electrode comprises carbon atoms at an atomic concentration greater than 50%.