US 12,256,552 B2
Analog non-volatile memory device using poly ferrorelectric film with random polarization directions
Chih-Sheng Chang, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 30, 2023, as Appl. No. 18/525,301.
Application 18/525,301 is a continuation of application No. 17/852,818, filed on Jun. 29, 2022, granted, now 11,856,784.
Application 17/852,818 is a continuation of application No. 16/733,029, filed on Jan. 2, 2020, granted, now 11,380,708, issued on Jul. 5, 2022.
Claims priority of provisional application 62/894,505, filed on Aug. 30, 2019.
Prior Publication US 2024/0114691 A1, Apr. 4, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 51/30 (2023.01); G11C 11/22 (2006.01); H01L 49/02 (2006.01)
CPC H10B 51/30 (2023.02) [G11C 11/223 (2013.01); G11C 11/2275 (2013.01); G11C 11/2297 (2013.01); H01L 28/75 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate; and
a ferroelectric tunnel junction (FTJ) over the substrate, the FTJ comprising:
a first capacitor comprising:
a bottom electrode over the substrate;
a dielectric layer over the bottom electrode; and
an internal metal layer over the dielectric layer; and
a second capacitor coupled in series with the first capacitor, comprising:
the internal metal layer;
a ferroelectric layer over the internal metal layer; and
a top electrode over the ferroelectric layer, wherein a first capacitance of the first capacitor is larger than the second capacitance of the second capacitor.