US 12,256,546 B2
Integrated assemblies and methods of forming integrated assemblies
Yiping Wang, Boise, ID (US); Andrew Li, Boise, ID (US); Haoyu Li, Boise, ID (US); Matthew J. King, Boise, ID (US); Wei Yeeng Ng, Boise, ID (US); and Yongjun Jeff Hu, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Nov. 2, 2023, as Appl. No. 18/386,346.
Application 18/386,346 is a division of application No. 18/074,055, filed on Dec. 2, 2022, granted, now 11,844,220.
Application 18/074,055 is a division of application No. 15/931,421, filed on May 13, 2020, granted, now 11,621,273, issued on Apr. 4, 2023.
Prior Publication US 2024/0064982 A1, Feb. 22, 2024
Int. Cl. H10B 43/00 (2023.01); H01L 21/283 (2006.01); H01L 21/306 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [H01L 21/283 (2013.01); H01L 21/30608 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/35 (2023.02)] 24 Claims
OG exemplary drawing
 
1. A method of forming an integrated assembly, comprising:
forming a source structure comprising semiconductor material over metal-containing material; additive being within a region of the semiconductor material to a concentration within a range of from 1018 atoms/cm3 to 1021 atoms/cm3; the additive comprising one or more of carbon, oxygen, nitrogen or sulfur;
etching into the region of the semiconductor material utilizing an etchant comprising phosphoric acid; the etching forming an opening which extends into, but not entirely through, the semiconductor material of said region;
forming a second structure over the source structure and extending into said opening; and
wherein the opening is configured as a trench, and wherein the second structure is configured as a panel extending along the trench; said panel comprising a laminate which includes a conductive material layer laterally between a pair of insulative material layers; the conductive layer directly contacting the semiconductor material of the source structure.