| CPC H05K 1/0218 (2013.01) [H05K 3/4688 (2013.01); H05K 2201/0187 (2013.01); H05K 2201/093 (2013.01); H05K 2201/09536 (2013.01)] | 20 Claims |

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1. A interconnect stack comprising:
a first dielectric layer with a first dielectric constant and a first dielectric loss tangent;
an intermediate layer comprising:
a first dielectric sublayer with a first sublayer dielectric constant and a first sublayer dielectric loss tangent;
an embedded conductive layer;
a second dielectric sublayer with a second sublayer dielectric constant and a second sublayer dielectric loss tangent, wherein the embedded conductive layer is positioned between the first and second dielectric sublayers; and
a second dielectric layer with a second dielectric constant and a second dielectric loss tangent, wherein the intermediate layer is positioned between the first and second dielectric layers;
wherein the first dielectric layer, first dielectric sublayer, second dielectric layer, and the second dielectric sublayer have different dielectric constants and dielectric loss tangents to form a hybrid structure.
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