US 12,255,647 B2
Memory module with fine-grained voltage adjustment capabilities
Scott Hanson, Austin, TX (US); and Daniel Martin Cermak, Austin, TX (US)
Assigned to AMBIQ MICRO, INC., Austin, TX (US)
Filed by Ambiq Micro, Inc., Austin, TX (US)
Filed on Jun. 27, 2023, as Appl. No. 18/214,947.
Application 18/214,947 is a continuation of application No. 17/894,023, filed on Aug. 23, 2022, granted, now 11,689,204.
Prior Publication US 2024/0072806 A1, Feb. 29, 2024
Int. Cl. H03K 19/17784 (2020.01); H03K 19/173 (2006.01); H03K 19/1776 (2020.01)
CPC H03K 19/17784 (2013.01) [H03K 19/1737 (2013.01); H03K 19/1776 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory module having a plurality of memory blocks, each memory block including a transistor;
a voltage generation module supplying two or more voltage rails at different voltage levels; and
a plurality of multiplexors electrically connected to the voltage generation module, wherein each memory block is electrically connected to one of the plurality of multiplexors, and each multiplexor is configured to select between the two or more voltage rails based on a process corner of the transistor in each memory block.