US 12,255,629 B2
Raised frame bulk acoustic wave devices
Tomoya Komatsu, Irvine, CA (US); Yiliu Wang, Irvine, CA (US); Takashi Hayashi, Suita (JP); Hironori Sano, Osaka (JP); Rei Goto, Osaka (JP); and Kwang Jae Shin, Yongin (KR)
Assigned to Skyworks Global Pte. Ltd., Singapore (SG)
Filed by Skyworks Global Pte. Ltd., Singapore (SG)
Filed on Mar. 24, 2022, as Appl. No. 17/703,863.
Claims priority of provisional application 63/166,100, filed on Mar. 25, 2021.
Claims priority of provisional application 63/166,126, filed on Mar. 25, 2021.
Prior Publication US 2022/0311410 A1, Sep. 29, 2022
Int. Cl. H03H 9/56 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/13 (2006.01); H03H 9/205 (2006.01)
CPC H03H 9/568 (2013.01) [H03H 9/02157 (2013.01); H03H 9/0504 (2013.01); H03H 9/13 (2013.01); H03H 9/131 (2013.01); H03H 9/205 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A bulk acoustic wave device comprising:
a first electrode;
a second electrode;
piezoelectric layer between the first electrode and the second electrode; and
a raised frame structure including a first raised frame layer and a second raised frame layer, the second raised frame layer having a higher acoustic impedance than the first raised frame layer, the second raised frame layer overlapping a portion of the first raised frame layer, the first raised frame layer extending further inward than the second raised frame layer, and the second raised frame layer having a thickness between about 0.02 and about 0.4 times a combined thickness of the first electrode, the piezoelectric layer, and the second electrode.