| CPC H03H 9/02866 (2013.01) [H03H 3/08 (2013.01); H03H 9/02574 (2013.01); H03H 9/02661 (2013.01); H03H 9/145 (2013.01); H03H 9/25 (2013.01); H03H 9/6489 (2013.01)] | 15 Claims | 

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               1. A surface acoustic wave device, comprising: 
            a base substrate; 
                a piezoelectric layer; 
                an electrode layer in between the piezoelectric layer and the base substrate; and 
                a comb electrode formed on the piezoelectric layer comprising a plurality of electrode fingers with a pitch ρ, defined as ρ=λ, with λ being a wavelength of a standing acoustic wave generated by applying opposite potentials to the electrode layer and the comb electrode, 
                wherein, the piezoelectric layer comprises at least one region located in between the plurality of electrode fingers in which at least one physical parameter is different compared to the region underneath the plurality of electrode fingers; and 
                wherein either a) a thickness t of the piezoelectric layer is defined by optimization of a coupling between a bulk acoustic wave and the standing acoustic wave generated between the comb electrode and the electrode layer and is on the order or smaller than the wavelength λ of the standing acoustic wave or b) a dimension of the comb electrode is defined by optimization of the coupling between the bulk acoustic wave and the standing acoustic wave generated by the comb electrode. 
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