CPC H03H 9/02574 (2013.01) [H03H 9/02535 (2013.01); H03H 9/02834 (2013.01)] | 15 Claims |
1. A SAW device comprising:
a carrier substrate,
a piezoelectric thin-film on the carrier substrate,
an interdigital electrode structure on the piezoelectric thin-film,
a layer stack of waveguide layers, the layer stack being arranged between the carrier substrate and the piezoelectric thin-film, wherein
the layer stack comprises a first waveguide layer and a second waveguide layer,
a sound velocity in the first waveguide layer is at least 1.5 times as great as a sound velocity in the second waveguide layer, and
a TCF compensating layer having a positive temperature coefficient of frequency arranged between the layer stack and the carrier substrate.
|