US 12,255,610 B2
Surface acoustic wave device
Shoji Kakio, Yamanashi (JP); and Noritoshi Kimura, Miyagi (JP)
Assigned to PIEZO STUDIO INC., Miyagi (JP); and UNIVERSITY OF YAMANASHI, Yamanashi (JP)
Filed by PIEZO STUDIO INC., Miyagi (JP); and UNIVERSITY OF YAMANASHI, Yamanashi (JP)
Filed on Sep. 6, 2022, as Appl. No. 17/903,757.
Claims priority of application No. 2021-146226 (JP), filed on Sep. 8, 2021.
Prior Publication US 2023/0071292 A1, Mar. 9, 2023
Int. Cl. H03H 9/02 (2006.01); H03H 9/145 (2006.01)
CPC H03H 9/02543 (2013.01) [H03H 9/14541 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A surface acoustic wave device comprising:
a piezoelectric substrate formed from a Ca3Ta(Ga1-xAlx)3Si2O14 (0≤x<1) single crystal; and
an interdigital electrode formed on a surface of the piezoelectric substrate, formed from Al, and configured to generate a Love-wave-type SH wave on the surface of the piezoelectric substrate,
wherein a normalized film thickness obtained by dividing a film thickness of the interdigital electrode by a wavelength of the Love-wave-type SH wave is not more than 0.16, and
wherein when a cut angle of the piezoelectric substrate from the single crystal and a propagation direction of the Love-wave-type SH wave are expressed as (ϕ, θ, ψ) in an Euler angle representation, ϕ=−5° to 5°, θ=50° to 160°, and ψ=85° to 95°.