US 12,255,600 B2
Methods of manufacturing acoustic wave device with anti-reflection layer
Satoru Matsuda, Toyonaka (JP); Tatsuya Fujii, Nagaokakyo (JP); Yoshiro Kabe, Kobe (JP); and Kenji Nagano, Ibaraki (JP)
Assigned to Skyworks Solutions, Inc., Irvine, CA (US)
Filed by Skyworks Solutions, Inc., Irvine, CA (US)
Filed on Nov. 16, 2023, as Appl. No. 18/511,405.
Application 17/657,533 is a division of application No. 16/790,408, filed on Feb. 13, 2020, granted, now 11,394,364, issued on Jul. 19, 2022.
Application 18/511,405 is a continuation of application No. 17/657,533, filed on Mar. 31, 2022, granted, now 11,855,603.
Claims priority of provisional application 62/806,560, filed on Feb. 15, 2019.
Prior Publication US 2024/0088865 A1, Mar. 14, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H03H 3/08 (2006.01); H03H 9/02 (2006.01); H03H 9/145 (2006.01); H03H 9/25 (2006.01); H03H 9/64 (2006.01); H03H 9/72 (2006.01)
CPC H03H 3/08 (2013.01) [H03H 9/02559 (2013.01); H03H 9/02574 (2013.01); H03H 9/02834 (2013.01); H03H 9/02842 (2013.01); H03H 9/14502 (2013.01); H03H 9/14541 (2013.01); H03H 9/25 (2013.01); H03H 9/6406 (2013.01); H03H 9/725 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing an acoustic wave device, the method comprising:
providing an acoustic wave device structure with at least one interdigital transducer electrode on a piezoelectric layer;
forming an anti-reflection layer over the interdigital transducer electrode, the anti-reflection layer including silicon; and
etching the interdigital transducer electrode, the anti-reflection layer reducing reflection from the interdigital transducer electrode.