US 12,255,440 B2
Semiconductor laser with a mode expansion layer
Ning Cheng, Plano, TX (US); Xiang Liu, Plano, TX (US); and Frank Effenberger, Frisco, TX (US)
Assigned to Huawei Technologies Co., Ltd., Shenzhen (CN)
Filed by Huawei Technologies Co., Ltd., Shenzhen (CN)
Filed on Dec. 23, 2021, as Appl. No. 17/561,187.
Application 17/561,187 is a continuation of application No. PCT/US2020/038956, filed on Jun. 22, 2020.
Claims priority of provisional application 62/865,821, filed on Jun. 24, 2019.
Prior Publication US 2022/0115841 A1, Apr. 14, 2022
Int. Cl. H01S 5/10 (2021.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01); H01S 5/32 (2006.01)
CPC H01S 5/1014 (2013.01) [H01S 5/2081 (2013.01); H01S 5/22 (2013.01); H01S 5/2205 (2013.01); H01S 5/3409 (2013.01); H01S 5/343 (2013.01); H01S 5/2086 (2013.01); H01S 5/3213 (2013.01); H01S 2301/18 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor laser and comprising:
epitaxially growing a first cladding layer above a substrate;
epitaxially growing a first confinement layer above the first cladding layer;
epitaxially growing a quantum well layer above the first confinement layer;
epitaxially growing a second confinement layer above the quantum well layer;
epitaxially growing a second cladding layer above the second confinement layer; and
epitaxially growing a first mode expansion layer within the first cladding layer so that the first mode expansion layer extends across a first width of the first cladding layer but not a first length or a first height of the first cladding layer, or epitaxially growing a second mode expansion layer within the second cladding layer so that the second mode expansion layer extends across a second width of the second cladding layer but not a second length or a second height of the first cladding layer.