US 12,255,439 B2
Light emitting silicon device
Dimitrios Kalavrouziotis, Papagou (GR); Paraskevas Bakopoulos, Ilion (GR); Elad Mentovich, Tel Aviv (IL); Anna Sandomirsky, Nesher (IL); Boaz Atias, Maale Adumim (IL); Doron Naveh, Petah-Tikva (IL); Eilam Zigi Ben Smolinsky, Ramat Gan (IL); Adi Levi, Rosh HaAyin (IL); and Rana Darweesh, Judieda Maker (IL)
Assigned to MELLANOX TECHNOLOGIES, LTD., Yokneam (IL)
Filed by MELLANOX TECHNOLOGIES, LTD., Yokneam (IL); and BAR-ILAN UNIVERSITY, Ramat Gan (IL)
Filed on Dec. 2, 2021, as Appl. No. 17/540,440.
Claims priority of application No. 20210100826 (GR), filed on Nov. 29, 2021.
Prior Publication US 2023/0170670 A1, Jun. 1, 2023
Int. Cl. H01S 5/10 (2021.01); H01S 5/02 (2006.01); H01S 5/026 (2006.01); H01S 5/042 (2006.01); H01S 5/30 (2006.01)
CPC H01S 5/1014 (2013.01) [H01S 5/021 (2013.01); H01S 5/026 (2013.01); H01S 5/04256 (2019.08); H01S 5/30 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A light emitting device, comprising:
a silicon substrate;
a waveguide disposed on or integrated in the silicon substrate, wherein the waveguide comprises a first end and a second end opposing the first end, wherein the waveguide comprises a wide waveguide section at the first end and a narrow waveguide section at the second end;
a first metal pad disposed over the wide waveguide section and at least partially across the first end of the waveguide, wherein the first metal pad also covers at least a portion of a top end of the wide waveguide section; and
a second metal pad disposed over the wide waveguide section, distanced away from the first metal pad, wherein electrical current passing between the first metal pad and the second metal pad causes light to be produced in the wide waveguide section and wherein the light produced in the wide waveguide section is at least partially reflected by the first metal pad and directed to the narrow waveguide section for transmission.