| CPC H01S 3/108 (2013.01) [H01S 3/109 (2013.01); H01S 5/02476 (2013.01); H01S 5/041 (2013.01); H01S 5/14 (2013.01); H01S 5/141 (2013.01); H01S 5/183 (2013.01); H01S 5/3408 (2013.01); H01S 5/3432 (2013.01); H01S 3/0815 (2013.01); H01S 5/0202 (2013.01); H01S 5/0652 (2013.01); H01S 5/3407 (2013.01)] | 20 Claims |

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1. A UV laser comprising:
a gain chip having one or more quantum wells or one or more quantum dots and as a semiconductor gain media for the laser, wherein:
the gain chip has one or more semiconductor thin disc laser cavities, the semiconductor thin disc laser cavity being a MECSEL cavity,
the one or more quantum wells or one or more quantum dots are enclosed inside the one or more thin disc laser cavities,
the gain chip comprises an optically bonded heat spreader as a first layer thereof, the heat spreader being a cooling material or composition selected from SiC, GaAs or a high-thermal conducting optic material having a coefficient of thermal expansion similar to that of the semiconductor gain media;
at least two mirrors, wherein at least one of the at least two mirrors is highly reflective and at least one of the at least two mirrors is partially reflective, and wherein the at least two mirrors are disposed to extract UV light from the one or more thin disc laser cavities;
a Visible Wavelength Laser Light Source, VWLS, wherein the one or more thin disc laser cavities support multiple frequencies of VWLS; and
length optimized non-linear optics to double the visible frequencies inside the one or more thin disc laser cavities into UV light,
wherein the UV laser is a MECSEL with a MECSEL setup with the at least two mirrors being operatively disposed disparately relative to the gain chip.
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