| CPC H01M 4/483 (2013.01) [H01M 4/0404 (2013.01); H01M 4/134 (2013.01); H01M 4/386 (2013.01); H01M 4/625 (2013.01); H01M 10/0525 (2013.01); H01M 2004/027 (2013.01)] | 10 Claims |

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1. A negative electrode comprising a negative electrode collector, a first negative electrode active material layer disposed on the negative electrode collector, and a second negative electrode active material layer disposed on the first negative electrode active material layer,
wherein the second negative electrode active material layer comprises a second negative electrode active material and a second conductive agent,
wherein the second negative electrode active material comprises a silicon-based active material,
the silicon-based active material comprises SiOx(0≤x<2),
the second conductive agent comprises a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are bonded side by side in a single plane, and
the carbon nanotube structure is included in an amount of 0.01 wt % to 1.0 wt % in the second negative electrode active material layer,
wherein in the carbon nanotube structure, the single-walled carbon nanotube unit has an average diameter of 0.5 nm to 10 nm, and
wherein the carbon nanotube structure has an average diameter of 10 nm to 100 nm.
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