US 12,255,278 B2
Semiconductor light emitting element and semiconductor light emitting device
Yasumitsu Kunoh, Toyama (JP); Masahiro Kume, Toyama (JP); Masanori Hiroki, Shiga (JP); Keimei Masamoto, Niigata (JP); Toshiya Fukuhisa, Osaka (JP); and Shigeo Hayashi, Kyoto (JP)
Assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto (JP)
Filed by Nuvoton Technology Corporation Japan, Kyoto (JP)
Filed on Mar. 10, 2021, as Appl. No. 17/198,039.
Application 17/198,039 is a continuation of application No. PCT/JP2019/035126, filed on Sep. 6, 2019.
Claims priority of application No. 2018-171212 (JP), filed on Sep. 13, 2018.
Prior Publication US 2021/0217942 A1, Jul. 15, 2021
Int. Cl. H01L 33/64 (2010.01); H01L 23/00 (2006.01); H01L 33/62 (2010.01)
CPC H01L 33/647 (2013.01) [H01L 24/14 (2013.01); H01L 33/62 (2013.01); H01L 2224/14519 (2013.01); H01L 2924/12041 (2013.01); H01L 2933/0066 (2013.01); H01L 2933/0075 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor light emitting device, comprising:
a semiconductor light emitting element; and
a mounting substrate, wherein:
the semiconductor light emitting element includes:
a substrate;
an n-type layer located above the substrate and including an n-type semiconductor;
a light emitting layer located above the n-type layer;
a p-type layer located above the light emitting layer and including a p-type semiconductor;
a p electrode located above the p-type layer;
an n electrode located in a region that is above the n-type layer and in which the light emitting layer and the p-type layer are not located;
a conductive p-electrode bump located above the p electrode and electrically connected to the p electrode;
a conductive n-electrode bump located above the n electrode and electrically connected to the n electrode; and
an insulation bump located in at least one region selected from a region between the n-electrode bump and the p-type layer and a region whose distance from an end of the p-type layer closer to the n-electrode bump is shorter than a distance from the end of the p-type layer to a position at which the p-electrode bump is located, in a plan view of the substrate,
the insulation bump includes a film and a columnar conductor, in order from a side on which the substrate is located,
the film is made of a resin containing a filler, and the columnar conductor is made of Au,
the insulation bump is located above an end of the p-type layer facing the n electrode,
the mounting substrate includes a first wiring electrode electrically connected to the p-electrode bump and a second wiring electrode electrically connected to the n-electrode bump,
the insulation bump is located in a region sandwiched between the n electrode and the first wiring electrode, or in a region sandwiched between the p electrode and the second wiring electrode, and
the columnar conductor is in contact with the first wiring electrode or the second wiring electrode.