US 12,255,265 B2
Devices comprising distributed bragg reflectors and methods of making the devices
Tito Busani, Albuquerque, NM (US); Daniel Feezell, Albuquerque, NM (US); Mahmoud Behzadirad, Albuquerque, NM (US); Morteza Monavarian, Albuquerque, NM (US); and Saadat Mishkat-Ul-Masabih, Albuquerque, NM (US)
Appl. No. 17/780,689
Filed by UNM RAINFOREST INNOVATIONS, Albuquerque, NM (US)
PCT Filed Nov. 27, 2020, PCT No. PCT/US2020/062510
§ 371(c)(1), (2) Date May 27, 2022,
PCT Pub. No. WO2021/108772, PCT Pub. Date Jun. 3, 2021.
Claims priority of provisional application 62/941,922, filed on Nov. 29, 2019.
Prior Publication US 2023/0011230 A1, Jan. 12, 2023
Int. Cl. H01L 33/10 (2010.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/08 (2010.01); H01L 33/12 (2010.01); H01L 33/18 (2010.01); H01L 33/24 (2010.01); H01S 5/125 (2006.01); H01S 5/34 (2006.01)
CPC H01L 33/10 (2013.01) [H01L 33/007 (2013.01); H01L 33/025 (2013.01); H01L 33/08 (2013.01); H01L 33/12 (2013.01); H01L 33/18 (2013.01); H01L 33/24 (2013.01); H01S 5/125 (2013.01); H01S 5/341 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A method for making a device, comprising:
forming a buffer layer on a silicon substrate;
forming a periodically doped layer on the buffer layer;
forming one or more nanowires on the periodically doped layer; and
introducing porosity into the periodically doped layer to form a porous distributed Bragg reflector (DBR).