US 12,255,264 B2
Enhanced room temperature mid-IR LEDs with integrated semiconductor ‘metals’
Daniel Wasserman, West Lake Hills, TX (US); Seth Bank, Austin, TX (US); Andrew Briggs, Austin, TX (US); and Leland Nordin, Austin, TX (US)
Assigned to Board of Regents, The University of Texas System, Austin, TX (US)
Filed by Board of Regents, The University of Texas System, Austin, TX (US)
Filed on Jun. 25, 2021, as Appl. No. 17/358,157.
Claims priority of provisional application 63/044,395, filed on Jun. 26, 2020.
Prior Publication US 2021/0408324 A1, Dec. 30, 2021
Int. Cl. H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/30 (2010.01)
CPC H01L 33/06 (2013.01) [H01L 33/0025 (2013.01); H01L 33/30 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a highly doped (n++) plasmonic epitaxial layer; and
a diode structure disposed above the n++ epitaxial layer,
wherein the diode structure is monolithically integrated with the highly doped (n++) plasmonic epitaxial layer in an all-epitaxial growth, and
wherein the highly doped (n++) plasmonic epitaxial layer is doped such that is optically metallic in a mid-IR range.