US 12,255,263 B2
Method for producing a radiation emitting semiconductor chip and radiation emitting semiconductor chip
Brendan Holland, Regensburg (DE)
Assigned to OSRAM Opto Semiconductors GmbH, Regensburg (DE)
Appl. No. 17/632,523
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Jul. 10, 2020, PCT No. PCT/EP2020/069501
§ 371(c)(1), (2) Date Feb. 3, 2022,
PCT Pub. No. WO2021/023473, PCT Pub. Date Feb. 11, 2021.
Claims priority of application No. 10 2019 121 178.6 (DE), filed on Aug. 6, 2019.
Prior Publication US 2022/0293815 A1, Sep. 15, 2022
Int. Cl. H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/60 (2010.01)
CPC H01L 33/0095 (2013.01) [H01L 33/20 (2013.01); H01L 33/60 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0058 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method for producing a radiation emitting semiconductor chip, wherein the method comprises:
providing a semiconductor layer sequence comprising an active region configured to generate electromagnetic radiation;
applying a reflective layer sequence over the semiconductor layer sequence;
generating a first recess through an opening of a mask; wherein the first recess completely penetrates the reflective layer sequence and the active region;
applying a dielectric mirror layer in the first recess through the same opening of the same mask; and
generating a first contact layer sequence in the first recess through the same opening of the same mask after a removal of the dielectric mirror layer in places.