US 12,255,260 B2
Photodetector
Itaru Oshiyama, Kanagawa (JP); and Yoshiki Ebiko, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 18/005,040
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jul. 7, 2021, PCT No. PCT/JP2021/025543
§ 371(c)(1), (2) Date Jan. 10, 2023,
PCT Pub. No. WO2022/019111, PCT Pub. Date Jan. 27, 2022.
Claims priority of provisional application 63/054,373, filed on Jul. 21, 2020.
Prior Publication US 2023/0335656 A1, Oct. 19, 2023
Int. Cl. H01L 31/0236 (2006.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01)
CPC H01L 31/02366 (2013.01) [H01L 31/02164 (2013.01); H01L 31/1868 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A photodetector, comprising:
a substrate having a first surface that serves as a light-receiving surface and a second surface opposed to the first surface, the substrate including an uneven structure provided on the first surface and a light-receiving section that performs photoelectric conversion to generate electric charge corresponding to an amount of light reception for each of a plurality of pixels included in the photodetector;
a passivation film stacked on the first surface of the substrate; and
a reflectance adjustment layer including a plurality of protrusions configuring the uneven structure and the passivation film embedded in a plurality of recesses configuring the uneven structure, wherein the reflectance adjustment layer has a refractive index between a refractive index of the substrate and a refractive index of the passivation film, and wherein the passivation film fills a separation section that extends from the first surface of the substrate and toward the second surface of the substrate.