US 12,255,258 B1
Semiconductor device
Petar Atanackovic, Henley Beach South (AU)
Assigned to Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed by Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed on Sep. 23, 2024, as Appl. No. 18/893,715.
Application 18/893,715 is a continuation of application No. 18/830,089, filed on Sep. 10, 2024.
Application 18/830,089 is a continuation in part of application No. 18/628,178, filed on Apr. 5, 2024.
Application 18/628,178 is a continuation in part of application No. 18/394,688, filed on Dec. 22, 2023, granted, now 12,074,195, issued on Aug. 27, 2024.
Claims priority of provisional application 63/584,661, filed on Sep. 22, 2023.
Int. Cl. H01L 29/872 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/872 (2013.01) [H01L 29/04 (2013.01); H01L 29/1608 (2013.01); H01L 29/6606 (2013.01)] 29 Claims
OG exemplary drawing
 
1. A multilayered semiconductor device comprising:
a substrate comprising n-type doped silicon carbide (SiC);
an epitaxial transition layer comprising a first semiconductor oxide material or SiC, wherein the epitaxial transition layer is on a surface of the substrate;
an epitaxial oxide layer comprising the first semiconductor oxide material, wherein the epitaxial oxide layer is in contact with the epitaxial transition layer; and
a metal layer above the epitaxial oxide layer,
wherein the epitaxial transition layer comprises an n-type doping density that is at least an order of magnitude greater than an n-type doping density of the epitaxial oxide layer, and
wherein the epitaxial transition layer further comprises a variable n-type doping density that varies in a growth direction that is approximately perpendicular to a top surface of the substrate.