US 12,255,257 B2
Semiconductor device
Mongsong Liang, Seongnam-si (KR); Sung-Dae Suk, Seoul (KR); and Geumjong Bae, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 7, 2024, as Appl. No. 18/598,672.
Application 16/395,907 is a division of application No. 15/238,059, filed on Aug. 16, 2016, granted, now 10,304,964, issued on May 28, 2019.
Application 18/598,672 is a continuation of application No. 17/574,166, filed on Jan. 12, 2022, granted, now 11,942,558.
Application 17/574,166 is a continuation of application No. 16/395,907, filed on Apr. 26, 2019, granted, now 11,251,312, issued on Feb. 15, 2022.
Claims priority of application No. 10-2015-0175226 (KR), filed on Dec. 9, 2015.
Prior Publication US 2024/0250186 A1, Jul. 25, 2024
Int. Cl. H01L 29/786 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10B 10/00 (2023.01)
CPC H01L 29/78696 (2013.01) [H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823437 (2013.01); H01L 27/088 (2013.01); H01L 29/0673 (2013.01); H01L 29/1608 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/7848 (2013.01); H01L 29/78618 (2013.01); H10B 10/12 (2023.02); H10B 10/18 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first active region extending in a first direction;
a second active region extending in the first direction and being spaced apart from the first active region in a second direction crossing the first direction;
a third active region extending in the first direction and being spaced apart from the second active region in the second direction;
a first gate electrode extending in the second direction and crossing the first active region;
a second gate electrode extending in the second direction and crossing the first active region and the second active region;
a third gate electrode extending in the second direction and crossing the second active region and the third active region, the third gate electrode being spaced apart from the first gate electrode in the second direction and being spaced apart from the second gate electrode in the first direction;
wherein the first active region including first channel portions spaced apart from each other in a third direction crossing the first direction and the second direction, the second active region including second channel portions spaced apart from each other in the third direction and the third active region including third channel portions spaced apart from each other in the third direction, and
wherein a first width of at least one of the first channel portions is less than a second width of at least one of the second channel portions and the second width is less than a third width of at least one of the third channel portions.