US 12,255,254 B2
Semiconductor device
Kentaro Ichinoseki, Nonoichi (JP); Tatsuya Nishiwaki, Nonoichi (JP); Kikuo Aida, Nomi (JP); and Kohei Oasa, Nonoichi (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Oct. 5, 2023, as Appl. No. 18/481,847.
Application 18/481,847 is a continuation of application No. 17/579,636, filed on Jan. 20, 2022, granted, now 11,810,975.
Application 17/579,636 is a continuation of application No. 16/558,530, filed on Sep. 3, 2019, granted, now 11,276,775, issued on Mar. 15, 2022.
Claims priority of application No. 2019-048329 (JP), filed on Mar. 15, 2019.
Prior Publication US 2024/0047571 A1, Feb. 8, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/78 (2006.01); H01L 29/423 (2006.01)
CPC H01L 29/7813 (2013.01) [H01L 29/4236 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor layer;
a first electrode on the semiconductor layer, the first electrode extending along a first axis;
a second electrode on the semiconductor layer, the second electrode extending along a second axis, the second axis being non-parallel to the first axis; and
a fifth electrode including a first portion, a second portion, a third portion, the first portion crossing the first electrode, the second portion crossing the second electrode, and the third portion crossing the second electrode and being separate at a first end from the second portion, wherein
the semiconductor layer includes:
a first semiconductor layer of a first conductivity type, the first semiconductor layer facing a third electrode with a first insulator between the third electrode and the first semiconductor layer;
a second semiconductor layer of a second conductivity type, the second semiconductor layer being in contact with the first semiconductor layer and facing the first electrode with a second insulator between the first electrode and the second semiconductor layer; and
a third semiconductor layer of the first conductivity type, the third semiconductor layer being in contact with the second semiconductor layer.