US 12,255,250 B2
Semiconductor device
Shoko Hanagata, Komatsu Ishikawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Mar. 8, 2022, as Appl. No. 17/689,800.
Claims priority of application No. 2021-152087 (JP), filed on Sep. 17, 2021.
Prior Publication US 2023/0090885 A1, Mar. 23, 2023
Int. Cl. H01L 29/739 (2006.01); H01L 29/861 (2006.01)
CPC H01L 29/7393 (2013.01) [H01L 29/861 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A semiconductor device in which a diode region and an IGBT region are set,
the device comprising:
a first electrode located from the diode region to the IGBT region;
a first semiconductor layer located on the first electrode in the diode region, the first semiconductor layer being of a first conductivity type;
a second semiconductor layer located on the first electrode in the IGBT region, the second semiconductor layer being of a second conductivity type;
a semiconductor layer located on the first and second semiconductor layers, the semiconductor layer being of the first conductivity type, an impurity concentration in a first upper region of the semiconductor layer in a first region being less than an impurity concentration in a second upper region of the semiconductor layer in a second region, the first region being positioned in the diode region and being adjacent to the IGBT region, the second region being positioned in the diode region and separated from the IGBT region;
a third semiconductor layer located on the semiconductor layer in the diode region and the IGBT region, the third semiconductor layer being of the second conductivity type;
a fourth semiconductor layer located on the third semiconductor layer in the IGBT region, the fourth semiconductor layer being of the first conductivity type;
a second electrode extending in a direction from the fourth semiconductor layer toward the semiconductor layer in the IGBT region, the second electrode being next to the fourth semiconductor layer, the third semiconductor layer, and the semiconductor layer;
a third electrode positioned on the third semiconductor layer in the diode region and positioned on the fourth semiconductor layer in the IGBT region; and
an insulating film located between the second electrode and the fourth semiconductor layer, between the second electrode and the third semiconductor layer, between the second electrode and the semiconductor layer, and between the second electrode and the third electrode.