US 12,255,248 B2
Semiconductor device including backside contact structure having positive slope and method of forming thereof
Wonhyuk Hong, Clifton Park, NY (US); Jongjin Lee, Clifton Park, NY (US); Taesun Kim, Ballston Spa, NY (US); Myunghoon Jung, Clifton Park, NY (US); and Kang-ill Seo, Springfield, VA (US)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 14, 2023, as Appl. No. 18/540,280.
Claims priority of provisional application 63/448,540, filed on Feb. 27, 2023.
Prior Publication US 2024/0290866 A1, Aug. 29, 2024
Int. Cl. H01L 23/528 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/66545 (2013.01) [H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 23/5286 (2013.01); H01L 27/088 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method of manufacturing an integrated circuit device, the method comprising:
forming a bottleneck-shaped backside contact structure in a semiconductor device, the backside contact structure having two sides in a substrate and partially within a first source/drain structure of the semiconductor device, wherein the semiconductor device has one or more source/drain structures, one or more channel structures and wherein the substrate is on a first side of the semiconductor device;
wherein the forming the bottleneck-shaped backside contact structure is performed such that the bottleneck-shaped backside contact structure includes:
a first side partially within the first source/drain structure and a second side opposite to the first side;
a first portion having a first slope that has a positive slope and a second portion, adjacent to the first portion, the second portion having a second slope that has a greater slope value than the first slope; and
the first portion and the second portion include: a liner extending from the first side to the second side, wherein the liner includes a first region comprised of either a Ta silicide liner or a Ti silicide liner, a second region comprised of a Ti or TiN liner and a third region comprised of either a Ta silicide liner or a Ti silicide liner.