US 12,255,235 B2
Field effect transistors with dual field plates
Johnatan Avraham Kantarovsky, South Burlington, VT (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Dec. 22, 2021, as Appl. No. 17/645,738.
Prior Publication US 2023/0197798 A1, Jun. 22, 2023
Int. Cl. H01L 29/40 (2006.01); H01L 21/76 (2006.01); H01L 21/765 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/404 (2013.01) [H01L 21/7605 (2013.01); H01L 21/765 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A transistor structure comprising:
a source;
a drain;
a gate between the source and the drain, wherein the gate has a top surface, the gate is T-shaped and having an upper portion and a lower portion, wherein the upper portion is wider than the lower portion;
a first field plate between the gate and the drain, wherein the first field plate is L-shaped and having a vertical portion over a horizontal portion, and a top surface of the vertical portion of the first field plate is at least as high as the top surface of the gate; and
a second field plate connected to the upper portion of the gate, wherein the second field plate partially overlaps the horizontal portion of the first field plate.