US 12,255,233 B2
Silicon carbide vertical conduction MOSFET device for power applications and manufacturing process thereof
Mario Giuseppe Saggio, Aci Bonaccorsi (IT); Alessia Maria Frazzetto, Sant'Agata Li Battiati (IT); Edoardo Zanetti, Valverde (IT); and Alfio Guarnera, Trecastagni (IT)
Assigned to STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed by STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed on Jan. 19, 2022, as Appl. No. 17/579,474.
Claims priority of application No. 102021000001895 (IT), filed on Jan. 29, 2021.
Prior Publication US 2022/0246723 A1, Aug. 4, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 21/04 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/086 (2013.01) [H01L 21/0465 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7802 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A vertical conduction MOSFET device, comprising:
a silicon carbide body having a first conductivity type and a face;
an insulated gate region on the face of the body;
a continuous metallization layer extending directly on the face of the body, the insulated gate region being between the face and the metallization layer;
a body region having a second conductivity type different than the first conductivity type, the body region extending in the body, from the face of the body, along a first direction coplanar with the face and along a second direction transverse to the face;
a source region having the first conductivity type, the source region extending towards an inside of the body region, from the face of the body, the source region including:
a first portion having a first doping level and being directly coupled to the metallization layer; and
a second portion having a second doping level and being directly coupled to the first portion of the source region and to the insulated gate region, the second doping level being lower than the first doping level.