US 12,255,232 B2
Gallium nitride drain structures and methods of forming the same
Chi-Ming Chen, Zhubei (TW); Kuei-Ming Chen, New Taipei (TW); and Yung-Chang Chang, Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 31, 2022, as Appl. No. 17/804,751.
Prior Publication US 2023/0387203 A1, Nov. 30, 2023
Int. Cl. H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 21/223 (2006.01); H01L 21/306 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/207 (2006.01); H01L 31/112 (2006.01)
CPC H01L 29/0847 (2013.01) [H01L 21/02576 (2013.01); H01L 21/2233 (2013.01); H01L 21/30612 (2013.01); H01L 29/0657 (2013.01); H01L 29/2003 (2013.01); H01L 29/207 (2013.01); H01L 31/112 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a drain structure in the substrate comprising a buffer portion in the substrate, a drain portion above the buffer portion, and a liner disposed between the drain portion and the substrate, wherein the buffer portion comprises gallium nitride and carbon (GaN:C), the drain portion comprises doped gallium nitride (GaN), and the liner comprises aluminum nitride (AlN);
a source comprising doped material; and
a channel electrically connecting the drain to the source, wherein the liner includes implanted silicon at least at an interface between the channel and the liner.