US 12,255,231 B2
Nanowire array, optoelectronic device and preparation method thereof
Richard Notzel, Guangzhou Guangdong (CN); Peng Wang, Guangzhou Guangdong (CN); Stefano Sanguinetti, Milan (IT); and Guofu Zhou, Guangzhou Guangdong (CN)
Assigned to South China Normal University, Guangdong (CN)
Appl. No. 17/254,107
Filed by South China Normal University, Guangzhou Guangdong (CN)
PCT Filed Jan. 11, 2019, PCT No. PCT/CN2019/071260
§ 371(c)(1), (2) Date Dec. 18, 2020,
PCT Pub. No. WO2020/140303, PCT Pub. Date Jul. 9, 2020.
Claims priority of application No. 201811648671.3 (CN), filed on Dec. 30, 2018.
Prior Publication US 2021/0336003 A1, Oct. 28, 2021
Int. Cl. H01L 29/06 (2006.01); B82Y 40/00 (2011.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01)
CPC H01L 29/0676 (2013.01) [H01L 21/02381 (2013.01); H01L 21/0254 (2013.01); H01L 21/02603 (2013.01); H01L 29/2003 (2013.01); B82Y 40/00 (2013.01); H01L 21/02378 (2013.01); H01L 21/02389 (2013.01); H01L 21/02395 (2013.01); H01L 21/0242 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for preparing the nanowire array, comprising adjusting an In-to-Ga flux ratio in a range from zero to infinite,
when the In-to-Ga flux ratio is 0.4 or less, producing an InGaN layer having an In content of 30% or less, at a growth temperature ranging from 500 to 900° C.;
wherein, an active N flux is 5 to 6 times a total metal flux consisting of In and Ga;
when the In-to-Ga flux ratio is above 0.4, producing the InGaN layer having the In content above 30%, at the growth temperature ranging from 300 to 500° C.; wherein, the active N flux is 3 to 4 times the total metal flux consisting of In and Ga;
wherein the total metal flux consisting of In and Ga to a value corresponding to a growth rate ranging from 0.2 to 1 μm/h;
wherein the nanowire array comprises a plurality of nanowires which are densely packed and in contact with each other via sidewalls thereof, such that a three-dimensional, compact layer structure is formed;
wherein the plurality of nanowires are formed from InGaN-based material; and
wherein each of the plurality of nanowires in the nanowire array has a diameter of 25 nm to 100 nm.