US 12,255,227 B2
SiC semiconductor device
Yuki Nakano, Kyoto (JP); Masaya Ueno, Kyoto (JP); Sawa Haruyama, Kyoto (JP); Yasuhiro Kawakami, Kyoto (JP); Seiya Nakazawa, Kyoto (JP); and Yasunori Kutsuma, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on Feb. 22, 2023, as Appl. No. 18/172,830.
Application 18/172,830 is a continuation of application No. 17/265,453, granted, now 11,621,319, previously published as PCT/JP2019/031451, filed on Aug. 8, 2019.
Claims priority of application No. 2018-151453 (JP), filed on Aug. 10, 2018; and application No. 2018-151454 (JP), filed on Aug. 10, 2018.
Prior Publication US 2023/0223433 A1, Jul. 13, 2023
Int. Cl. H01L 29/04 (2006.01); H01L 21/04 (2006.01); H01L 21/761 (2006.01); H01L 21/78 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01)
CPC H01L 29/045 (2013.01) [H01L 21/0465 (2013.01); H01L 21/761 (2013.01); H01L 21/78 (2013.01); H01L 29/0623 (2013.01); H01L 29/1608 (2013.01); H01L 29/6606 (2013.01); H01L 29/872 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An SiC semiconductor device comprising:
an SiC semiconductor layer including an SiC epitaxial layer formed on an SiC substrate, the SiC epitaxial layer having a device forming surface facing a c-plane of an SiC monocrystal and having an off angle inclined to an off direction with respect to the c-plane, and a side surface in an orthogonal direction to the off direction, the side surface having an angle less than the off angle inclined with respect to a normal to the device forming surface, and
a plurality of modified layers formed at intervals in a thickness direction of the SiC semiconductor substrate to expose the SiC epitaxial layer at the side surface and modified to be of a property differing from the SiC semiconductor substrate.