| CPC H01L 27/1463 (2013.01) [H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H01L 27/14831 (2013.01)] | 17 Claims |
|
1. An image sensor comprising:
a substrate including first and second surfaces opposite to each other;
a device isolation layer that extends through the substrate and has a surface that is level with the second surface of the substrate;
an active region comprising first and second pixel regions that are separated from each other by the device isolation layer, and are spaced apart from each other in a first direction;
a photoelectric device located in the substrate and configured to convert light into electric charges;
a microlens on the first surface;
a first select transistor and a first source follower transistor in the first pixel region;
a second source follower transistor in the second pixel region;
a first node between the first select transistor and the first source follower transistor on the first pixel region; and
a second node on one side of the first select transistor on the first pixel region,
wherein the first and second source follower transistor have a common gate electrode that extends over the device isolation layer and the first and the second pixel regions,
wherein the first node is a source/drain region of the first select transistor and the first source follower transistor,
wherein the second node is a source/drain region of the first select transistor, and
wherein the second node does not overlap with the first node in the first direction.
|